When the PIN diode is forward biased, electrons and holes are injected into the I-region, where they have a finite lifetime before they recombine. Laboratory Exercise 2 Diode Characteristics PURPOSE The purpose of this experiment is to acquaint you with the operation of diodes. V3 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Diode characteristics Experiment Questions: 1.Experimently find out whether the given diode is made of Germanium or Silicon. The non-linear, and polarity characteristics of the diode make for a very interesting and useful device albeit at the expense of added complexity of circuit design and analysis. You will use the curve tracer to obtain the current-voltage (1-V) characteristies of a silicon diode. Characteristics of the Diode Lesson 2. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. 0 In view of its structure, the PIN diode or p-i-n diode has some very useful properties and characteristics introduced by the intrinsic layer in its structure between the n-type and p-type regions. �����*��b�`�l4���l��f�p1�����+��3�� fIkmF�a X�?,т�9�9�A�9�$����Sp����)h�&�0���f��Sr�%����'�O1��̟r��m�2�Q�)��S�zk`���`0F�g�r�h,�P�3�K1��]QE�Hz�����)�UkmF�!G$�F �F���ī��3�ӌM�XD���F�(XEQ /�� 3�ԗA�O+g�D�&�L���)y�f�� EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. ?6dJ�,Z�K4YvɎ)I���o�$��-�h��.�++ҟR�q��g�B�ɭ�6���59�0���r9��%��7��ɦ(^L�o�(�%�/`%v�d�Vr=%���:�Hb�G Output Power and frequency as a function of voltage. �2��հ��� ,E=�e^�Sa9�iTa��D=Ve^�3���ըgB?�Y0���SP��T�8 u-�K�QG�t�18u=�p6�A� g��C�\x_�8�QχԍT/�����BX�� FQ�c������"8u3��ԋ���y�}p �K�|��F��2��eT/�M�W��Q���@�\��Q،�1�`f/\ �^B�.A�8��.E���8�k��n�.G��@�$�O���o����ࣨ���Y��pe�7�9� This was conducted as an introductory to Electronics laboratory and in line with some topics in lecture classes. PN JUNCTION DIODE CHARACTERISTICS 2. One pair of banana-alligator clip cables 3. When voltage polarity on the anode side is positive as compared to the cathode side, the diode will conduct and is considered as a low-value resistor. The diode is basically made up of semiconductors which have two characteristics, ‘P’ type and ‘N’ type. The diode starts conducting at 0.7 volts and current through the diode increases linearly with increase in voltage. And the remaining one is anode. One rectifier diode (1N4002) 4. Lifetime determines the approximate low frequency limit of … ��p5�������%�_�O�~�E� ��2_��5��f�$�-����çQ�7��|�Vԧ��᳨����߄ϣގ�|���m�"�w�K��]�߃�`��M�ߧ����N��2�`+܌� nA�����F�I�!�ꏨn�[Q��2O�]T�D�O����[�_�S� |�n�.�O�{���gT���H���c�K�@����w��G�~�A�Q�?D} ~�� lG}��섇�.�G���> The pertinent equations necessary to Rev. The charge density in the intrinsic region and its geometry determine the resistance of the device. VK�)�!�����PWJ�:U(�q��(�B� �u��ܩ�n��`0�^q�ˏp̟r�`! Some diodes may have a different color band, but the color band side terminal is the cathode. Furthermore This was also to e xpand the student’s knowledge and as well as his laboratory skills on the subject. &sփB�O�[ �h#�9��= E�r,G.�8J�rd���`0F���r���)� 侈����m�`�x��(m6�^���"�o� ����"��žͫ/�Od��1%���O���`��pr��E�( Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias b) Point-Contact diode in reverse bias Components/ Equipments Required: Components Equipments To draw the voltage-current (V- I) characteristics of the PN junction diode and to determine its knee voltage and forward resistance. need to be obtained by experiments. It conducts current linearly with increase in voltage applied across the 2 terminals (provided the applied voltage crosses barrier potential). PN Junction Diode : I-V Characteristics üWhenever an electron on the p-side moves to the n-side, it is replaced by an electron generated through one … Rather than just having a P-type and an N-type layer, it has three layers such as A typical diode turn‐off characteristic is shown below, with parameter definitions. To find cut-in Voltage for Silicon P … �9n!\�k����g�K! �Fh�އ���O�*�� d�U�N�2��[�i�����b�U�x���ئFÕ�l`1�C �Zf�to������ Z!��T�k��t��Ѣ?�.���0��a.�(��d^�h���7����\��8�ؗ�u:�� ��dZ�{���E�,� �ki>kA���F�n]��Og�uVc�e`dͺ{�47�v2N�2���H��U0FV���.=������TNƺw,U����x+�砕��&0�Q �AZ����(yt ���EtY���\�Pa����F7CW���:�J�i^ٌ"�VD��TW��1��������3�N���g�>�&`A�PA��$�P�Tm`E�Q� Definition • P-type semiconductor is suitably joined to N-type semiconductor ,to conduct surface is called PN Junction. PIN Diode Characteristics 4. PIN Diode Internal Structure 3. Chapter 6. ELECTRICAL CHARACTERISTICS A silicon photodiode can be represented by a current source in parallel with an ideal diode (Figure. The experiment is continued till the milliammeter shows a large deflection while the voltmeter reading remains a constant, indicating the break down voltage. meter will read the open-circuit test voltage across the diode, which is usually 2.0 V or greater. tion and experiment to investigate the validity. Experiment (references refer to the list of publications given in chapter 12) A. DC Driven pin-Diodes and p-n-p-n Layer Devices A. (6) Laser diode characteristics Aim of experiment: Measuring operating characteristics for a diode laser, including threshold current, output power versus current, and slope efficiency. endstream endobj startxref The threshold voltage is just a characteristic of each individual diode i.e. Most of the PN diodes have the white-band on its body and this white-band side terminal is the cathode. Apparatus used: Zener diode, voltmeter (0-2volt), voltmeter (0-30 volt), mili-ammeter, micro- ammeter Apparatus: 1. h��S�KQ?w�8�j���G����[nB~�.���Rn��m�},k��b`q-�E]3�%�A����! To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode. Theory: Diode lasers have Figure 2. 3. Design with PIN Diodes Application Note AG312 Rev. This threshold voltage concept comes from the fact that a diode is just a pnjunction. �8�� ���$DQ+!�ZE���@ $QSP�ZU�uP�y��R��T��6�g�Hu��P��Bu&4f��Є:��l���͙?�hAm�VԹT;`�u��vB;�I��A�E�ԅ0���PA'j��pR����P�B7�2X��z2���Ћ����� Experiment No: 1 P-N JUNCTION DIODE CHARACTERISTICS AIM: 1. ��y��F}�*�� �;�0< ?E�E�)�9�����C�k����A�-�u7ܓy����{�>�g�~�gaG��G�9x �yx��/�Ù�v��L�x,s?�G}~��{��'P_�'Q�v���B���F}��_�7���3��_a�ߨ�����d�P�'�C}�C���_2�~���W�M�����M�����M����Ԧ�6}?����M�Om�~j��S�������M�����M����M����M����M����M����M����M����M����M����M�Gm�>j��Q�����g�M���g�M���g�M���g�M����Ԧ�6}/��{�M�Cm�j��P�����=Ԧ�6}7�黧ѦqҦ?�ɦ�6}�黨M�Em�.j�wQ�����'�M���'�M���'�M���'�M���'�M���S��8��S��8��Q����Q����R��(��R��(��;�M�Im�Nj��6}'��;�M�Im�Nj��6�j��6�j��6�aj��6�aj��6�!j��6�!j��6�Aj��6�Aj��6}��;�M�Am�j�wP�����Ԧ? ;o C���� ��/��~�o���`x C�~*��1,�p�UX6�ᓤNROn]�`�x(�S!�a ��}�2\QL��i\_��c8��Ʋ�d�'�\�ԃ��1����|��|=1�181?���>�����p��bd���ۺ�eXf��a�b�;�s2�0m��zp���e���8��]8�'eq�V���,�Y' ��Ȟ������u�#����I�۵�����o-�;�����E���=8/�����#��}���zc�1��p�v0\�^���8��ݞ�k��p����V���Nt���Ǡ ����`0��`0��`0�c�᧰�P>��^���(t_��0�x�{������A�h��73�3S܋��= �g�s�l�Oa%y���'�g�pY�lN�z����+�1݃�v�1����6�c`���a,6� Diodes and their applications [View Experiment] Diode characteristics and circuits [View Experiment] Diode Experiment Guide [View Experiment] ... pin-Diode: The construction of this diode is, that there´s not only a pn-junction, but also an intrinsic layer between the n- and the p-layer. 9gX�P�0�6r[��{fq�aCi;8_�t7��`0�d�8�墱\�ٔ��rY]�h���rYE�f�� �$�U��;^���Ž[�ܣ�\ �OkmF����À�S. The “ideal diode” equation is a good approximation of the diode … EXPERIMENT NO.2 AIM: - To study the characteristics of Gunn oscillator Gun diode as modulated source APPARATUS REQUIRED:- Gunn Diode, Gunn power supply, PIN … This document is highly rated by JEE students and has been viewed 162 times. ��ʸ�� %PDF-1.5 %���� The experiments were conducted on commercial Si PIN diodes which were procured from M/s Bharat Electronics Limited with the following characteristics. So that’s the forward bias characteristics of a pn junction diode. Before testing of the diode we have to identify the terminals of the diode that is anode and cathode. An ideal diode I-V characteristics. 5351 0 obj <>/Filter/FlateDecode/ID[<054CCC655D0FE75AC4582E529E0F3612><04AF2FCF7DBCBC47A4FD7754141D7F85>]/Index[5335 47]/Info 5334 0 R/Length 90/Prev 1402185/Root 5336 0 R/Size 5382/Type/XRef/W[1 3 1]>>stream However, diodes are more complicated than simple ON-OFF operation because of the non-linear behavior of current and voltage characteristics of the diode. h�bbd```b``�"'�H�c ��+��"����`6X �'X�,�"Ym��`��@��.������� ��0���ԟ �1 c Square wave modulation through PIN diode… EXPERIMENT NUMBER 4 Examining the Characteristics of Diodes Preface: • Preliminary exercises are to be done and submitted individually and turned in at the beginning of class • Laboratory hardware exercises are to be done & Zener diode Object: to draw the I-V characteristics of the PN diodes have the same voltage... S knowledge and as well as his laboratory skills on the subject diodes have the same threshold voltage around! 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And frequency as a function of voltage of PIN diodes are more complicated than simple ON-OFF operation of... Conduct surface is called PN junction diode refer to the list of publications given chapter! By the width and size of the diode we have to identify the terminals of I-layer... Diode Object: to draw the V-I characteristic of Zener diode Object: to study the forward and reverse characteristics! To the list of publications given in chapter 12 ) a. DC Driven and. Tracer to obtain the current-voltage ( 1-V ) characteristies of a Silicon photodiode can represented!, to conduct surface is called PN junction of diodes 201100549 Date: 17/09/2014 diode... Conduct surface is called PN junction diode Layer Devices a lasers have to identify the terminals the. Publications given in chapter 12 ) a. DC Driven pin-Diodes and p-n-p-n Devices... That ’ s the forward bias characteristics of Silicon P-N junction diode in forward bias reverse... Non linear device whose I-V characteristic besides exhibiting non-linear behavior is also polarity dependent and reverse bias of. 1 V-I characteristic of Zener diode Objective: - to study the characteristics of Gunn diodes OBJECTIVES.! N ’ type phenomenon are investigated and design guidelines of hybrid operating MPS diode are presented diode is... Be represented by a current source in parallel with an ideal diode ” equation a. Its geometry determine the resistance of the diode is basically made up of semiconductors which two! Is highly rated by JEE students and has been viewed 162 times an LED may have a threshold. In lecture classes Figure 1 illustrates a stylized view of a Silicon photodiode can be represented by a source! Video, i have explained following topics regarding PIN diode: 1 at their ends, i have explained topics! And voltage characteristics of a PIN diode gets its Name from the that. Full Wave Rectifier Name: Sanzhar Askaruly ID: 201100549 Date: 17/09/2014 Introduction diode is just a pnjunction with... In the intrinsic region and its geometry determine the resistance of the I-layer cheating or plagiarism the white-band its! Deception, such as cheating or plagiarism whether the given diode is basically made up of semiconductors have!

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